ZnO纳米棒在Si衬底上外延生长研究

Epitaxial Growth of ZnO Nanorods on Si Substrate

运用热蒸发ZnO粉末法,以金做催化剂,分别在Si(100)和Si(111)两种基片上外延生长了ZnO纳米棒(样品分别标为1#和2#)。通过X射线衍射(XRD)和扫描电子显微镜(SEM)分析,结合ZnO与Si的晶格结构特征,从理论上得出了两个样品的晶格匹配关系。1#样品:[0001]ZnO∥[114]Si,[0001]ZnO∥[1-1-4]Si,[0001]ZnO∥[11-4]Si,[0001]ZnO∥[1-14]Si,失配度为1.54%;2#样品:[0001]ZnO∥[111]Si,[21-1-0]ZnO∥[11-0]Si,[1-21-0]ZnO∥[1-01]Si,[1-1-20]ZnO∥[011-]Si,失配度为18.12%。研究表明Si衬底对ZnO纳米棒生长方向具有调控作用。

Epitaxial ZnO nanorods were grown on Si （100） and Si （ 111 ） substrates by thermal evaporation technique with Au catalysts. The ZnO nanorods was analyzed with XRD and SEM. On Si （ 100）, the majority of the nanorods grow in one of the four directions, [ 0001 ] ZnO//[ 114 ] Si, [ 0001 ]ZnO//[ 1^-1^-4 ] Si, [ 0001 ] ZnO//[ 11^-4 ]Si, [ 0001 ] ZnO//[ 1^-14 ] Si, which mismatch is 1.54%. On Si （ 111 ）, nanorods grow perpendicular to silicon plane due to [0001 ]ZnO//[111 ]Si, [21^-^-0]ZnO//[ 11^-0]Si, [ 1^-21^-0]ZnO// [ 1^-01 ] Si, [1^-1^-20 ] ZnO// [ 011^- ]Si epitaxy, and mismatch is 18.12%. Which indicates Si （ 100 ） substrate controls growing orientation of ZnO nanowires array.