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热处理对Ni_(0.7)Zn_(0.3)O薄膜结构及缺陷荧光特性的影响

Influence of Annealing on Microstructure and Defect-related Photoluminescence of Ni_(0.7)Zn_(0.3)O Thin Film
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摘要 采用脉冲激光沉积法在Si(100)衬底上制备了Ni0.7Zn0.3O薄膜,通过热处理改变薄膜的缺陷状态,并利用X射线衍射仪、扫描电子显微镜和荧光光谱仪表征薄膜的晶体结构、表面形貌和缺陷发光特性。结果表明:沉积态薄膜为立方结构的Ni0.7Zn0.3O单相,且沿着(200)面高度取向生长。经过热处理后,薄膜形成ZnO和Ni0.7Zn0.3O两相共存的镶嵌结构。样品具有非常丰富的室温荧光光谱,其发光峰主要来自Ni0.7Zn0.3O的缺陷能级跃迁,多缺陷能级导致了多发光峰的荧光光谱。热处理引起薄膜中缺陷的种类和浓度发生变化,严重影响其发光特性。 Annealing Ni0.7Zn0.3O thin film was prepared on Si（100） substrate at 500℃ by pulsed-laser deposition. was performed at 1000℃ for 60 min to change the state of defects in the sample. X-ray diffractometer, scanning electron microscope, fluorescence spectrometer were used to analyze microstructure,morphology and defect-related photoluminescence. The results show that the as-deposited film is of cubic Ni0.7Zn0.3O single phase with preferred （200） growth orientation and there are the coexistence of ZnO and Ni0.7Zn0.3O in the annealed sample. Ni0.7Zn0.3O film exhibits abundant roomtemperature fluorescence spectra originating from transitions among defect energy levels of Ni0.7Zn0.3O. Annealing induces variations in the type and concentration of defects, which greatly influence the defectrelated photoluminescence.
作者 林方婷 李娜 马学鸣 石旺舟
机构地区 华东师范大学物理系光谱学与波谱学教育部重点实验室
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2007年第3期608-611,共4页 Journal of Synthetic Crystals
基金 上海市科委纳米专项基金(No.0652nm023)资助项目
关键词 Ni0.7Zn0.3O薄膜 脉冲激光沉积 缺陷荧光特性 热处理 Ni0.7Zn0.3O thin films pulsed-laser deposition defect-related photoluminescence annealing
分类号 O484 [理学—固体物理]
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人工晶体学报
2007年 第3期

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