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PLZT纳米薄膜的制备及其特性研究 被引量：1

Preparation and Properties of PLZT Nanometer Thin Film
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摘要 经溶胶-凝胶法制备出PLZT纳米多层膜,采用热重-差热、X射线衍射、拉曼光谱、SEM等对目标产物进行性能和微结构分析。结果表明:在700℃下保温30min,得到粒径约为50～70nm钙钛矿结构的PLZT纳米薄膜,随Zr含量增大粒径变小,且由三方相向四方相转变。 The Pb0.93La0.07 （ZrxTi（1-x））0.93O3 （abbreviated as PLZT） thin film was prepared by Sol-gel process. The samples were investigated by TG-DTA, XRD, Rama spectrum and SEM. The results show that the PLZT nanosized thin film with perovskite structure in size of about 50-70nm was obtained at 700℃ sintering for 30min, The particle size of PLZT nanosized thin film decreases and the phases of PLZT nanosized thin film shifts from tetragonal to thombohedral with the increasing of the Zr concentration.
作者 宿杰 余大书 郭云峰 何聚 王立群
机构地区 天津师范大学物理与电子信息学院 天津大学理学院应用物理系 黄山学院电子信息工程系
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2007年第3期668-671,共4页 Journal of Synthetic Crystals
基金 天津市高等学校科学发展基金(No.20041022) 天津师范大学青年科研基金(No.52LJ39) 天津师范大学自然科学基金(No.5RL019)资助项目
关键词 溶胶-凝胶法 不同Zr/Ti比 PLZT纳米薄膜 Sol-gel process different Zr/Ti PLZT nanosized film
分类号 TN304 [电子电信—物理电子学]
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参考文献8

  • 1苗彬彬,王君,陈江涛,闫鹏勋.铁电PLZT薄膜的最新研究进展[J].人工晶体学报,2006,35(3):539-544. 被引量：8
  • 2Chen Y,Singh R,LI G,et al.A Study of Rapid Photothermal Annealing of Sputtered Lead Lanthanum Zirconia Titanate Thin Films[J].Electrochem.Soc.,1998,145(12):4317-4321.
  • 3Zhang W F,Huang Y B,Zhang M S.Optical Properties of Ferroelectric (Pb,La)(Zr,Ti)O Thin Films Grown by Pulsed Laser Deposition[J].Appl.Surf.Sci.,2000,158(3-4):185-189.
  • 4Kamalasanan M N,Chandra S.Sol-gel Synthesis of ZnO Thin Films[J].Thin Solid Films,1996,288:112.
  • 5Kim S S,Choi S Y,Park C G,et al.Transparent Conduclive ITO Thin Films through the Sol-gel Process Using Metal Salts[J].Thin Solid Films,1999,347:155.
  • 6Changho Lee,Vasili Spinrin,et al.Drying Drying Temperature Effects on Microstructer,Electical Properties and Electro-optic Coettlcients of Sol-Gel Derived Pzr Thin Films[J].Thin Solid Films,1999,340:242-249.
  • 7Brya W J.Polarized Raman Scatering in Transparent Polycrystalline Solids[J].Phys.Rev.Lett.,1971,26(18):1114-1118.
  • 8Rouquette J,Haines J,Bornand V,et al.P-T Phase Diagram of PbZr0.52Ti0.48O3[J].Solid State Science,2003 (5):451-457.

二级参考文献34

  • 1卢朝靖,蒋昌忠,王世敏,石瑛,黄桂玉,赵建洪,顾豪爽,邝安祥.在Pt/SrTiO_3衬底上制备高c轴取向PbTiO_3薄膜[J].科学通报,1993,38(14):1273-1275. 被引量：3
  • 2阎培渝,苏涛,李龙土,张孝文.用溶胶－凝法制备锆钛铅铁电薄膜[J].高技术通讯,1995,5(6):43-46. 被引量：4
  • 3Haertling G H.Ferroelectric Ceramics:History and Technology[J].J.Am.Ceram.Soc,1999,82:797-818.
  • 4Takahashi S.Effects of Impuritydoping in Lead Zirconate-titanate Ceramics[J].Ferroelectrics,1982,41:143-156.
  • 5Santiranjan Shannigrahi,Kui Yaoa.Effects of WO3 Dopant on the Structure and Electrical Properties of Pb0.97La0.03(Zr0.52Ti0.48)O3 Thin Films[J].Appl.Phys.Lett,2005,86:092901.
  • 6Heartling G H,LandCE.Hot-pressed (Pb,La)(ZrTi)O3 Ferroelectric Ceramics for Electro-optic Applications[J].J.Am.Ceram.Soc,1971,54(1):1-11.
  • 7Soma Dutta,Choudharya R N P,et al.Microstructural Studies of (PbLa) (ZrTi) O3 Ceramics Using Complex Impedance Spectroscopy[ J ].J.Appl.Phys,2004,96:1607-1613.
  • 8Jaffe B.Piezoelectric Ceramics[J].J.Am.Ceram.Soc,1958,41:494-498.
  • 9Jaffe B,Cook W R,Jr,Jaffe H.Piezoelectric Ceramics[ M].Academic,New York,1971.
  • 10Jaffe H,Berlincourt D A.Piezoelectric Transducer Materials[J].Proc.IEEE,1965,53(10):1372-1386.

共引文献7

同被引文献16

  • 1赵坚强,岳振星,王伟强,杨刚,桂治轮,李龙土.准同型相界附近PZT压电陶瓷电致疲劳性能研究[J].功能材料,2006,37(12):1929-1931. 被引量：3
  • 2Meng Q, Kui Y, Liang Y C. Photovohaic mechanisms in ferroelectric thin films with the effects of the electrodes and interfaces [ J ]. Applied Physics Letters, 2009, 95 ( 2 ) 022912 : 1 - 3.
  • 3Zhao H J, Ren T L, Zhang N X, et al. Preparation and properties of PLZT thick films on silicon [ J]. Materials Sci- ence and Engineering, 2003, 21 (9) : 197.
  • 4Huang D J, Deng H M, Yang P X, et al. Optical and elec- trical properties of multiferroic bismuth ferrite thin films fab- ricated by sol-gel technique [ J]. Materials Letters, 2010, 64(20) :2233 -2235.
  • 5Gaidi M. , Amassian A. , Chaker M. , et al. Pulsed laser deposition of PLZT films: structural and optical character- ization [J]. Applied Surface Science, 2004, 226(4):347- 354.
  • 6Jang N W, Mah S B, Paik D S, et al. Structural and elec- trical properties of PLZT thin films on ITO-coated glass prepared by sol-gel process [ J ]. Materials Research Bulletin, 1999, 34(9) :1463 - 1472.
  • 7Zhang S, Cheng X, Zhang Y. In-situ observation on do- main switching of PLZT via Raman spectroscopy [ J ]. Trans. Nonferrous Met. Soc. China, 2006, 16 ( 3 ) : 638 - 642.
  • 8Feng Z C, Chen J H, Zhao J, et al. Raman scattering of ferroelectric lead lanthanum titanate thin films grown on fused quartz by metalorganic chemical vapor deposition [ J ]. Ceramics International, 2004, 311 ( 7 ) : 1561 - 1564.
  • 9Kong L B, Ma J, Zhu W, et al. Highly enhanced sinter- ability of commercial PZT powders by high-energy ball milling [J]. Journal of Alloys and Compounds, 2000, 46 (5) :295.
  • 10Park H H, Kim S W, Yang J K, et al. Characterization of PLZT thin film prepared by photochemical deposition using photosensitive metal-organic precursors [ J ]. Microelectron- ic Engineer-ing, 2004, 71(2) :218 -219.

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人工晶体学报
2007年 第3期

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