摘要
采用RF溅射技术制备了SrGa2S4:Ce薄膜,并获得了发射波长为446nm的纯蓝色发光,其CIE色坐标为x=014,y=009。研究了SrGa2S4:Ce薄膜的激发光谱和发射光谱,采用XRD测定了薄膜的晶体结构,采用SEM观察了薄膜的表面形貌。同时着重研究了后退火气氛、温度和时间对薄膜发光特性的影响。
SrGa 2S 4:Ce thin films have been grown by RF sputtering, which show pure blue photoluminescence with the peak wavelength of 446nm and CIE color coordinates of x=0 14, y=0 09 Excitation and emission spectra of SrGa 2S 4:Ce thin films have been studied The crystallinity and image of thin film are analyzed and observed using XRD and SEM respectively The effects of annealing conditions on luminescent characteristics are also studied
出处
《功能材料与器件学报》
CAS
CSCD
1997年第2期136-140,共5页
Journal of Functional Materials and Devices