摘要
本文报导了用分子束外延方法生长的掺ＴｅＧａＳｂ／ＡｌＳｂ超晶格的温度变化光致发光谱。对于阱宽为９０Ａ。的超晶格样品，根据发光强度与激发功率的关系得出，低温下的复合以辐射复合为主；线型分析显示存在很强的激子声子耦合。本文还讨论了发光淬灭机制。
Temperature dependent photoluminescence of Te doped GaSb/AlSb superlattices grown by molecular beam epitaxy is presented For a superlattice with well width of 90A。, radiative recombination dominates at low temperatures, and very strong exciton phonon coupling is deduced from the linewidth analysis The quench mechanism of photoluminescence is also discussed
出处
《功能材料与器件学报》
CAS
CSCD
1997年第2期141-144,共4页
Journal of Functional Materials and Devices
