摘要
CMP的加工过程,是对晶圆表面进行平坦化的过程,在对晶圆表面材料进行去除当中产生了热量,造成温度的上升,为了获得均匀的抛光去除率,达到全局的平坦化,必须对温度采取精确控制,分析研究了CMP加工过程中热量的产生,并介绍了一种对温度进行控制的方法。
CMP is a process to planarize the surface of the wafer. During the removal process of the surface material of the wafer, a large amount of heat is produced, which elevates the temperature. A precise control of temperature is necessary for uniformity of material removal and global planariztion. This paper studies the output of the heat during the CMP process, and presents a temperature control method.
出处
《电子工业专用设备》
2007年第10期14-16,共3页
Equipment for Electronic Products Manufacturing
