a-Si:HSchotky 势垒结构太阳能电池中的载流子俘获效应a-Si:H太阳能电池稳定性研究

Carrier Trapping Effects in a Si∶H Schottky Barrier Structure A Study of Stability in a Si∶H Solar Cells

基于实验结果，应用Ｓｃｈａｒｆｅｔｅｒ－Ｇｕｍｍｅｌ解法数值求解Ｐｏｉｓｓｏｎ方程，对经高强度光辐照过的ａ－ＳｉＨＳｃｈｏｔｋｙ势垒结构太阳能电池进行计算机数值分析。计算结果与实验一致并且进一步指明，随着光辐照发生的载流子俘获造成的ａ－ＳｉＨ中空间电荷净增加或减少都会使电池内部电场分布发生变化和准中性区（低场“死层”）的出现，从而导致载流子收集长度的减少。这是ａ－ＳｉＨＳｃｈｏｔｋｙ势垒结构太阳能电池光致性能衰退的重要原因。于是。

On the basis of experimental results,a computer analysis model has been developed using a numerical solution of Poisson's equation for a hydrogenated amorphous silicon (a Si∶H) Schottky barrier structure subjected to light soaking.The calculations agree with experimental results and further indicate that due to carrier trapping with light soaking,the increased or decreased space charge density changes electric field distribution and leads to a wider quasi neutral region (low field “dead layer”)in the structure,resulting in reduced carrier collection length.This is an important cause of light induced degradation of a Si∶H Schottky barrier solar cells.Thus,a new way to improve the stability of a Si∶H solar cells may be proposed.