摘要
建立了双层多晶硅ｆｌｏｔｏｘＥＥＰＥＯＭ存储管的阈值电压模型，利用该模型研究了擦／写阈值与擦／写时间、编程电压、隧道孔面积、隧道氧化层厚度的关系，采用１．４μｍＣＭＯＳ工艺设计了双层多晶硅ｆｌｏｔｏｘ单元。模拟结果和实验结果基本一致，该阈值电压模型为ＥＥＰＥＯＭ单元的优化设计提供了一种快速、简便、实用的准则。
la this paper, the model of two-polysilicon folotox EEPROM threshold voltage model has been established . Then , the relatioa between erase/write tbredbold voltage and erase/write time, programing voltage, tunnel area, folox thickness have been studied based on this model. Tbe two-polysilicon fotox EEPROM cell has beea designed The experiment reaults are approximately- concordant with the sizaulation results. So, the thresbold model can be used as a fast, sim ple, actual ruler for EEPROM cell optimization deaign.
出处
《应用科学学报》
CAS
CSCD
1997年第1期82-88,共7页
Journal of Applied Sciences
基金
江苏省青年科技基金
