50～110nm波段高反射率多层膜的设计与制备

Design and Fabrication of High Reflection Multilayer for the Wavelength Range 50～110 nm

阐述了50～110nm强吸收波段亚四分之一波长多层膜的设计方法．这种膜系是由强吸收材料叠加而成，每层膜光学厚度小于四分之一个波长．与常规周期多层膜相比，这种膜系更适用于提高强吸收波段的反射率．利用该方法设计了50nm处高反射多层膜，并以此为初始条件通过Levenberg-Marquart优化方法完成了50～110nm强吸收波段宽带高反射率Si／W／Co多层膜的设计，其平均反射率达到45％．采用直流磁控溅射方法制备了Si／W／Co多层膜，用X射线衍射仪（XRD）对膜层结构进行了测试，测试结果表明制作出的多层膜结构与设计结构基本相符．

A design method of absorbing range 50～110 nm layers of strong absorbing m sub-quarter-wave multilayers with enhanced normal reflectance in the strong has been presented. The multilayers consisted in the superposition of a few aterials. The optical thickness of each layer in the multilayers is less than quarter-wave thickness. Compared to the standard multilayers, this multilayer structure more suits to enhance reflectance of strong absorbing wavelength range. High reflectance multilayers Si/W/Co was designed at wavelength of 50 nm by using this method,and then optimized based on this initial condition by using Levenberg-Marquart algorithm in a wide wavelength range 50 ～ 110 nm. The calculated results suggest that the reflectance of the multilayer is as high as 45 %. The sample was fabricated by using a high vacuum direct current magnetron sputtering. Then, the multilayer was characterized by a low angle X-ray diffraction. The results suggest that the fabricated multilayer structure meets the design requirement.