湿法清洗制程优化对焊盘表面再结晶缺陷抑制

Optimizing Wet Clean Process for Restraining Pad Recrystallization Defect

芯片焊盘上的再结晶缺陷是引起半导体后段封测工艺中键合失效的主要原因之一。国际上已经对这一缺陷的形成有了一定的理论分析,也提出了可以通过湿法清洗来去除此缺陷。在此基础上,通过对湿法清洗这一制程的优化,可在抑制焊盘表面再结晶缺陷的同时,有效地避免随之产生的焊盘腐蚀的问题,并且通过更换晶盒的步骤进一步降低了再结晶缺陷出现的可能性。同时提出了氟浓度对再结晶缺陷的影响以及对此的监测方法,对于大生产过程中抑制焊盘表面再结晶缺陷形成有一定的参考价值。

Pad crystal defect is one of the major causes of bondability failure in back-end assembly. Some certain researches and theoretical analysis on it were carried out, and wet clean method was proposed for removing the pad crystal defect. Based on it, by optimizing the wet clean process after bonding pad dry etching, the pad recrystallization defect can be restrained and incidental metal corrosion defect can be avoided. The pad recrystallization defect can be further prevented by changing concentration on the pad recrystallization defect and the monitoring method were the pad crystal defect in mass production. the pod can. The effect of F given. It is helpful to restrain