摘要
同步整流技术已成为目前提升开关电源芯片转换效率的有效手段。以采用UMC0.6μm BiCMOS工艺制造的升压转换器为例,基于功率MOS管工作机理,对不同的负载情况和工作模式分别加以分析和模拟验证,并提出了管子尺寸的合理选择和死区时间的合理设置。为了避免电感电流倒灌,提出了DCM模式下过零检测结构电路。利用HSPICE对相关电路进行了仿真分析,得到了同步整流技术中功率器件的优化结果。
Synchronous rectifier technology becomes an efficient means to advance the transform efficiency recently. A boost converter implemented in UMC 0.6 μm BiCMOS process was presented, Based on the work principle of the power MOSFET, the different loads and operating modes were analyzed, simulated and verified. The selecting dimension of power MOSFETs and setting the dead time reasonably were proposed. A zero cross detect circuit was put forward to escape the current of inductance from inversing in DCM mode. Correlated circuits in synchronous rectifier for the highest conversion efficiency were simulated and analyzed by HSPICE.
出处
《半导体技术》
CAS
CSCD
北大核心
2007年第11期975-979,共5页
Semiconductor Technology
基金
国家自然科学基金资助项目(60371017)
关键词
过零点检测
同步整流
升压转换器
断续传导模式
连续传导模式
zero cross detect
synchronous rectifier
boost converter
discontinuous current mode （DCM）
continuous current mode （CCM）
