摘要
为有效模拟基于单晶硅材料的微机电器件摩擦副的摩擦磨损状况,设计了一种分离式片上微摩擦测试机构。该测试机构利用微机电系统体硅工艺及键合技术,把加载机构、测试机构、摩擦副以及力传感器集成在一个单一的硅片上。对该机构的测试结果表明:摩擦副之间的静摩擦因数约为0.9,动态摩擦因数随着施加在摩擦副上正压力的变化而变化。
An on--chip micro--tribotester was designed and fabricated to simulate the tribolgical properties for the lateral contact surfaces of MEMS devices. The loading structure, testing part and force sensors were all integrated on a single chip by bulk silicon technology and bonding process. It is verified from the tested results that the static frictional coefficient between the contact pairs is 0.9 and dynamic frictional coefficient varies with normal force.
出处
《中国机械工程》
EI
CAS
CSCD
北大核心
2007年第21期2539-2542,共4页
China Mechanical Engineering
关键词
片上微摩擦测试机构
体硅工艺
键合技术
动态摩擦因数
静态摩擦因数
on--chip micro--tribotester
bulk silicon technology
bonding process
dynamic fric tional coefficient
static frictional coefficient
