摘要
提出了一种基于PSPICE4.02通用电路模拟程序与优化技术相结合提取GaAsMES-FET模型参数的方法.根据实测的GaAsMESFET小信号S参数与大信号S参数,利用约束优化技术提取模型等效电路元件参数,并利用该电路模型参数设计制作了3.7GHz~4.2GHz和5.2GHz~5.8GHzGaAsMESFET放大器。
This paper presents a method for obtaining GaAsMESFET model parameters. The method is based on circuits simulation programs PSPECE4.02 and optimization technique. According to actual measured small singal S parameters and large signal s parameters for GaAsMESFET, the element parameters of GaAsMESFET equivalent circuit can be found. By using these data, this method has the capability of designing GaAsMESFET amplifers 3.7 GHz~4.2 GHz & 5.2 GHz~5.8 GHz. The accuracy has been shown by the good agreement of comparison between the designed and measrued results.
出处
《天津大学学报》
EI
CAS
CSCD
1997年第3期331-336,共6页
Journal of Tianjin University(Science and Technology)