AgGa_(1-x)In_xSe_2单晶体生长及结构性能研究

Study on the Crystal Growth and Properties of AgGa_(1-x)In_xSe_2

采用改进Bridgman法生长出外观完整的尺寸为Φ15 mm×35 mm的AgGa1-xInxSe2(x=0.2)单晶锭。其晶格常数为a=0.60125 nm,c=1.10243 nm,为黄铜矿结构,与标准PDF卡片(No.35-1095)吻合。X射线粉末衍射谱图的谱峰尖锐,无杂峰,表明得到的AgGa1-xInxSe2(x=0.2)单晶锭的结晶状态好。对晶锭沿自然显露面解理取样后经X射线衍射发现晶体的自然显露面为(101)面,并观测到{101}晶面族的四级衍射峰,其回摆峰尖锐且半峰宽窄,表明晶体的结晶性完好并且结构完整,同时证实沿(101)晶面自然显露是AgGa1-xInxSe2(x=0.2)晶体生长习性的一种体现。DSC-TG分析表明晶体的熔点和凝固点分别为822.67℃和801.58℃,总失重约为2.027%。

An integral AgGa1-xInxSe2（x = 0. 2） single crystal with the diameter of 15 mm produced by the modified Bridgman method. Using X-ray diffraction the spectrum of AgG tained. The lattice constants of a and c were 0.60125 nm and 1. 10243 nm, respectively. rite structure. The results were in good agreement with the standard PDF card （No. 35 - and length of 35 mm was a1-xInxSe2 crystal was obThe crystal was chalcopy- 1095）. After cleavage along the spontaneous face it was proved that the face was （ 101 ） face and the four order X-ray spectrum of the {101} face was obtained. Spontaneous showing along the （101） face was the growth characteristic of AgGa1-xInxSe2 （ x =0.2） crystal. The rocking curve＇ s peak of the （101） face was sharp and the width value of the half-peak was small, which showed that the crystal has integral structure. The melting and freezing points of AgGa1-xInxSe2 （ x = 0.2） were 822.67 ℃ and 801.58 ℃, respectively, which were measured by DSC. The measure results proved that the crystal was of integral structure and high quality.