低掺磷对Yb:YVO_4晶体性能影响的研究(英文)

Effect of Low Concentration P on Yb:YVO_4 Single Crystal

采用提拉法生长出Yb:YPxV1-xO4(X=0.02,0.06,0.10)晶体。XRD测试表明晶体保持了四方锆石型结构,晶胞参数随着x的增大逐渐减小。ICP发射光谱分析显示P5 +的分凝系数为1,Yb3 +的分凝系数随着x的增大逐渐减小。吸收系数和吸收截面随着P含量的加大出现先增大后减小的变化。晶体的拉曼光谱表现出双声子过程的特征,随x的增加拉曼频移峰向高频率方向移动,线宽随之增宽。

Yb：YPxV1-xO4（x=0.02,0.06,0.10） single crystals were grown by Czochralski method .The analytic result of XRD indicates that the structure of crystal was remain tetragonal zircon-type structure and the lattice parameters were decreased linearly with increasing x.The measurement of ICP emission spectrum shows that the effective segregation coefficient Keff of P element in crystal is 1, but that of Yb^3＋ ion in crystal decreased when x increases. The absorption coefficient and cross-section increases then decreased when the concentration of P element increased. A two phonon-like behavior was shown in the Raman spectra of Yb：YPxV1-xO4 crystal, and a peak shifting to high-frenquecy with line broadening occurred when the x value increased.