衬底温度对直流反应磁控溅射法制备的N掺杂p型ZnO薄膜性能的影响(英文)

Effects of Substrate Temperature on the Properties of N-doped p-type ZnO Films Deposited by DC Reactive Sputtering

利用直流反应磁控溅射法(纯金属锌作为靶材,Ar-N2-O2混合气体作为溅射气体)在石英玻璃衬底上制备了N掺杂p型ZnO薄膜。通过XRD、Hall和紫外可见透射谱分别研究了衬底温度对ZnO薄膜结构性能、电学性能和光学性能的影响。XRD结果显示所有制备的薄膜都具有垂直于衬底的c轴择优取向,并且随着衬底温度的增加,薄膜的晶体质量得到了提高。Hall测试表明衬底温度对p型ZnO薄膜的电阻率具有较大影响,400℃下生长的p型ZnO薄膜由于具有较高的迁移率(1.32 cm2/Vs)和载流子浓度(5.58×1017cm-3),因此表现出了最小的电阻率(8.44Ω.cm)。

N-doped ZnO thin films were prepared on glass substrates by DC reactive magnetron sputtering using a pure zinc disk as target and Ar-N2-O2 mixture as sputtering gas. The effects of substrate temperature on the structural, electrical and optical characteristics of the ZnO films were studied by XRD, Hall effect measurement and UV-vis transmittance spectra, respectively.The results of XRD indicate that all the thin films had a preferred orientation with the c-axis perpendicular to the substrates, and the crystalline quality of the films was improved as the substrate temperature increased. Hall effect measurements show that the resistivity of the p-type ZnO thin films is dependent on the substrate temperature during deposition. The resistivity of the thin film grown at 400℃ had a minimum resistivity of 8.44 Ω·cm due to its higher mobility （1.32cm^2/Vs） and hole concentration （5.58×10^17cm^-3）.