无电镀沉积于硅衬底上铜纳米晶的场发射性能(英文)

Field Emission from Copper Nanocrystallites Electrolessly Deposited on Silicon Substrate

采用无电镀沉积技术在经过机械抛光的单晶硅衬底上沉积了铜纳米晶。利用X射线衍射数据,估算出所沉积铜纳米晶的平均粒径大约为40nm。对120s无电镀沉积样品的场发射测试表明,该样品的开启场强为～5.5 V/μm,在场强达到9.26 V/μm时的场发射电流密度可达到62.5μA/cm2。对相应的沉积过程和场发射机理进行了分析。结果表明,无电镀沉积技术有可能成为制备具有较好场发射性能的金属/硅冷阴极的一种可供选择的方法。

Copper nanocrystallites were deposited on mechanically polished single crystal silicon （sc-Si） wafers by electroless deposition method. The average size of the copper nanocrystallites was evaluated to be about 40nm based on X-ray diffraction data. Field emission measurements show that for the sample prepared by 120s deposition, a current density of 62.5 μA/cm^2 was obtained at an electric field of 9.26 V/μm, with a turn-on field of 5.5V/μm. The corresponding deposition process and the field emission mechanism were analyzed. Our results indicate that electroless deposition might be a candidate method for fabricating metal/silicon cold cathodes with excellent field emission properties.