大气开放式MOCVD氧化镁薄膜的生长及表征(英文)

Growth and Characterization of the Magnesia Thin Film by Atmospheric-pressure MOCVD

以2,4-乙酰丙酮化镁为前驱体,衬底温度为480℃,采用MOCVD工艺,分别在玻璃、氧化铝陶瓷、单晶Si(111)和Si(100)衬底上生长了取向生长的氧化镁薄膜。X射线衍射结果表明,无论是采用玻璃、氧化铝、单晶Si(111)和Si(100)衬底,氧化镁薄膜都是沿着(100)晶面取向生长。通过扫描电镜观察得到,在单晶Si(100)衬底上生长的氧化镁薄膜表面平整致密。模拟卢瑟福背散射结果显示,沉积时间超过70min时,界面处发生硅向氧化镁层少量扩散现象。

High quality MgO thin films have been successfully grown on glass, Al2O3, Si（111） and Si（100） substrates at 480℃ by using atmospheric-pressure metalorganic chemical vapor deposition （AP-MOCVD）technique. Magnesium 2,4-pentanedionate was used as metalorganic source. X-ray diffraction experiments provided evidence that the MgO films grown on glass, Al2O3,Si（111） and Si（100） with （100） orientation were regardless of the substrate materials and orientations. The as-grown MgO film on Si（100） has a very smooth surface morphology and a nearly stoichiometric composition by scanning electron microscopy （SEM） and Rutherford backscattering （RBS）. According to the simulation,diffusion of Si near the interface was found when the growth time reached 70min.