氧分压对直流磁控溅射制备ZnO：Ga透明导电薄膜特性的影响

Effects of Oxygen Partial Pressure on the Properties of Transparent Conductive ZnO:Ga Films Prepared by DC Reactive Magnetron Sputtering

通过直流反应磁控溅射法在玻璃衬底上制备了掺镓ZnO(znO:Ga)透明导电薄膜,研究了氧分压对ZnO:Ga透明导电薄膜结构和电光学性能的影响.X射线衍射结果表明所制备的薄膜具有c轴择优取向的六角多晶结构.ZnO:Ca透明导电薄膜的晶粒尺寸强烈依赖于氧分压的大小,随着氧分压的增大薄膜的晶粒尺寸先增大后减小,在氧分压为0.30 Pa时沉积的ZnO:Ga薄膜半高宽最小,晶粒尺寸最大.薄膜的电阻率随着氧分压的增大先减小后增大,沉积薄膜的最低电阻率可达3.50×10^(-4)Ω·cm.此外,所有ZnO:Ga薄膜在可见光范围内的平均透射率均超过90%.

Ga-doped zinc oxide （ZnO：Ga） transparent conductive films were deposited on glass substrates by DC reactive magnetron sputtering. The influence of oxygen partial pressure on the structural, electrical and optical properties of ZnO：Ga films was investigated. The X-ray diffraction （XRD） studies show that the films are highly oriented with their crystallographic c-axis perpendicular to the substrate. The grain size of ZnO：Ga films is strongly dependent on the oxygen partial pressure. With the oxygen partial pressure increasing, the grain size of the films increases first, reaches a maximum at 0.30Pa and then decreases. As the oxygen partial pressure increases, the resistivity of ZnO：Ga films decreases gradually, reaches a minimum at 0.30Pa and then increases. The lowest resistivity of ZnO：Ga films obtained at the oxygen partial pressure of 0.30Pa is 3.50× 10^-4Ω·cm. The average transmittance of the ZnO：Ga thin films is over 90%.