摘要
给出了采用硅外延BCD工艺路线制造的低成本的VDMOS设计,纵向上有效利用17μm厚度的外延层,横向上得到的VDMOS元胞面积为324μm2,工艺上简化为18次光刻,兼容了标准CMOS、双极管和高压p-LDMOS等器件.VDMOS测试管的耐压超过200V,集成于64路170 PDP扫描驱动芯片功率输出部分,通过了LG-model-42v6的PDP上联机验证.
A VDMOS integrated in a 170V scan-driver chip of a plasma display panel （PDP） is described,which is based on epitaxial bipolar-CMOS-DMOS （BCD） technology. Some key considerations and parameters of the design are discussed. The thickness of epitaxial layer is 17μm, the area of a single VDMOS structure cell is 324μm^2, and only 18 photoetching steps are needed in the development process. It is also compatible with standard CMOS, bipo- lar,and p-LDMOS devices. The breakdown voltage of VDMOS in the process control module （PCM） is more than 200V. Five kinds of VDMOS modules are integrated in 64 channel PDP scan-driver IC, and on-line system verifica- tion is done on a LG-model-42v6 PDP.
基金
国家高技术研究发展计划(批准号:2003AA1Z1410)
西安科技发展计划(批准号:ZX04003)资助项目~~
