期刊文献+

Compact Modeling for Inversion Charge in Nanoscale DG-MOSFETs

纳米尺度双栅MOS器件反型层电荷的集约建模(英文)
下载PDF
导出
摘要 A compact model for the integrated inversion charge density Qi in double-gate (DG-) MOSFETs is developed. For nanoscale applications,quantum confinement of the inversion carriers must be taken into account. Based on the previous work of Ge, we establish an expression for the surface potential with respect to Qi, and form an implicit equation, from which Qi can be solved. Results predicted by our model are compared to published data as well as results from Schred,a popular 1D numerical solver that solves the Poisson's and Schr6dinger equa- tions self-consistently. Good agreement is obtained for a wide range of silicon layer thickness,confirming the supe- riority of this model over previous work in this field. 建立了双栅MOS器件反型层积分电荷Qi的集约模型.该模型考虑了反型层载流子的量子限制效应,使其适用于纳米尺度的器件应用.基于以前关于Ge的研究,通过建立关于Qi的表面势表达式,可得到一个隐含Qi的方程,从而求得Qi的值.将该模型计算结果与目前已发表的模型计算结果以及自洽求解一维泊松方程和薛定锷方程的数值模拟程序Schred的模拟结果进行了比较.结果表明,该模型在较大的硅层厚度变化范围内均与数值模拟程序的计算结果吻合得很好,显示出其相对与目前发表的其他模型的优越性.
作者 李萌 余志平
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第11期1717-1721,共5页 半导体学报(英文版)
基金 日本NEDO基金 国家高技术研究发展基金资助项目(批准号:2006CB302700)~~
关键词 compact model quantum confinement effect double-gate MOSFETs 集约模型 量子限制效应 双栅MOS器件
  • 相关文献

参考文献5

  • 1Baccarani G,Reggiani S.A compact double-gate MOSFET model comprising quantum-mechanical and nonstatic effects.IEEE Trans Electron Devices,1999,46(8):1656.
  • 2He J,Zhang X,Wang Y.A complete carrier-based noncharge-sheet analytic model for nano-scale undoped symmetric double-gate MOSFETs.Proceedings of IEEE Conference on Electron Devices and Solid-State Circuits,2005:247.
  • 3Ge L,Fossum J G.Analytical modeling of quantization and volume inversion in thin Si-film DG MOSFETs.IEEE Trans Electron Devices,2002,49(2):287.
  • 4Schred 2.1 Tutorial.https:∥www.nanohub.org/tools/schred/.
  • 5Lopez-Villanueva J A,catujo-Cassinello P,Gamiz F,et al.Effects of the inversion-layer centroid on the performance of double-gate MOSFET's.IEEE Trans Electron Devices,2000,47(1):141.

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部