期刊文献+

高密度排列大功率垂直腔面发射激光器列阵 被引量:4

Densely Packed High Power VCSEL Arrays
下载PDF
导出
摘要 报道了980nm高密度排列大功率垂直腔面发射激光器列阵的研制.列阵单元为蜂窝状密堆积排列,单元台面直径为70μm,氧化孔径为30μm,相邻单元间隔为100μm.制作了含7,19,37个单元的列阵,讨论了它们的阈值电流和远场特性.在室温连续工作条件下,3种列阵的最大输出功率分别为0.26,0.5和0.6W.其中含37个单元的列阵在6A脉冲电流(脉宽30μs,重复频率100Hz)激发下,输出功率达到1.4W. The fabrication process of 980nm,densely packed, high power, VCSEL 2D-arrays is reported for the first time in China's Mainland. The individual elements of the arrays are arranged in a honeycomb-like layout, the mesa diameter of the ele- ment is 70μm, the oxide aperture is 30μm ,and the center-to-center spacing of neighboring elements is 100μm. VCSEL arrays containing 7,19 ,and 37 elements are fabricated, and the characteristics of the threshold current and the far-field angle are discussed. Given CW operation at room temperature,these three kinds of arrays have 0. 26,0. 5,and 0. 6W output power,re- spectively. With a 6A pulse current (30μs at 100Hz) ,the 37-elements array′s output power reaches 1.4W.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第11期1803-1806,共4页 半导体学报(英文版)
基金 国家自然科学基金重点资助项目(批准号:60636030)~~
关键词 垂直腔面发射激光器 列阵 阈值电流 发散角 大功率 VCSEL array threshold current far-field angle high power
  • 相关文献

参考文献6

  • 1Iga K,Koyama F,Kinoshita S.Surface emitting semiconductor lasers.IEEE J Quantum Electron,1988,24(9):1845.
  • 2孙艳芳,金珍花,宁永强,秦莉,晏长岭,路国光,套格套,刘云,王立军,崔大复,李惠青,许祖彦.高功率底发射VCSELs的制作与特性研究[J].光学精密工程,2004,12(5):449-453. 被引量:15
  • 3Asaro D,Seurin L A,Wynn J F,et al.High-power,high-efficiency VCSELs pursue the goal.Photonics Spectra,2005,39(2):62.
  • 4Francis D,Chen H L,Chang-Hasnain C,et al.Monolithic 2D-VCSEL array with>2W CW and>5W pulsed output power.Electron Lett,1998,34(22):2132.
  • 5Miller M,Grabherr M,Ebeling K J,et al.High-power VCSEL arrays for emission in the Watt regime at room temperature.IEEE Photonics Technol Lett,2001,13(3):173.
  • 6Grabherr M,Miller M,Jager R,et al.High-power VCSEL's:single device and densely packed 2-D-arrays.IEEE J Sel Topics Quantum Electron,1999,5(3):495.

二级参考文献8

  • 1[2]IGA K, ISHIKAWA S, OHKOUCHI S, et al .Room-temperature pulsed oscillation of GaAlAs/GaAs surface emitting injection laser[J]. Appl.Phys.Lett. , 1984,45(4):348-350.
  • 2[3]KOYAMA F,KINOSHITA S,IGA K. Room-temperature continuous wave lasing characteristics of a GaAs vertical cavity surface-emitting laser[J].Appl.Phys.Lett., 1989,55(3):221-222.
  • 3[5]RAFAILOW E U, SIBBETT W, MOORADIAN A. Effilient frequeney doubling of a vertical-extended-cavity surface-emitting laser diode by use of a periodically poled KTP crystal[J]. Optics Letters , 2003,28(21):2091-2093.
  • 4[6]MILLER M, GRABHERR M, KING R, et al . Improved output performance of high-power VCSELs[J]. IEEE J. Sel.Top.Quantum Electron , 2001:7210-7216.
  • 5[7]CHOW W W,CHOQUETTE K D,CRAWFORD M H, et al .Design, fabrication, and performance of infrared and visible vertical-cavity durface-emitting lasers[J].IEEE Journal of Quantum Electronics, 1997, 33(10):1810-1824.
  • 6[8]DABBICCO M, SPAGNOLO V,FERRARA M, et al. Experimental eetermination of the temperature distribution in trench-confined oxide vertical-cavity surface-emitting lasers[J].IEEE Journal of Quantum Electronics, 2003,39(6):701-707.
  • 7[9]YAN CH,NING Y, QIN L, et al . A high Power InGaAs/GaAsP vertical-cavity surface-emitting laser and its temperature characteristics[J].Semiconductor Science and Technology , 2004,19:685-689.
  • 8[10]WIPIEJEWSKI T, PETER M G, THIBEAULT B J, et al . Size-dependent output power saturation of vertical-cavity surface-emitting laser diodes[J].IEEE Photonics Technology Letters , 1996, 8(1):10-12.

共引文献14

同被引文献37

引证文献4

二级引证文献13

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部