基于低温缓冲层的单片集成长波长可调谐光探测器

A Monolithic Integrated Long-Wavelength Tunable Photodetector Based on a Low Temperature Buffer Layer

实现了一种单片集成的长波长可调谐光探测器.通过外延实验,摸索出低温缓冲层的最佳生长条件,成功地在GaAs衬底上生长出晶格失配度约4%的高质量的InP基材料.基于此低温缓冲层,在GaAs衬底上首先生长GaAs/AlAs材料的F-P腔滤波器,然后异质外延InP-In0.53Ga0.47As-InP材料的PIN结构.制作出的器件通过热调谐,峰值波长从1533.1nm红移到1543.1nm,实现了10.0nm的调谐范围,同时响应线宽维持在0.8nm以下,量子效率保持在23%以上,响应速率达到6.2GHz.

We demonstrate a tunable long-wavelength photodetector by using a he（eroepitaxy growth of an InP-In0.53 Ga0.47- As-InP p-i-n structure on a GaAs-based GaAs/AIAs Fabry-Perot filter structure. High quality heteroepitaxy is realized by em- ploying a thin low-temperature buffer layer, which is carried out in a series of experiments. A wavelength tuning range of 10.0nm,an external quantum efficiency of about 23%, a spectral linewidth of 0.8nm, and a 3dB bandwidth of 6.2GHz are simultaneously obtained in the device.