n-GaAs和p-GaN晶片的直接键合

Direct Bonding of n-GaAs and p-GaN Wafers

采用直接键合的方法成功实现了n-GaAs和p-GaN晶片的高质量键合.扫描电子显微镜观测结果表明,键合界面没有空洞.键合前后光致发光谱测试表明,键合工艺对材料质量影响不大.室温下界面的电流-电压特性表明,键合得到的n-GaAs/p-GaN异质结为肖特基二极管并且理想因子为1.08.n-GaAs和p-GaN材料直接键合的成功对于集成GaAs和GaN材料制备光电集成器件有重要意义.

n-GaAs and p-GaN wafer pairs are successfully bonded by direct wafer bonding technology. SEM results indicate that there is no bonding gap at the bonding interface. PL measurements indicate that the bonding process does not visibly change the crystal quality. The current-voltage characteristics at room temperature show that the bonded n-GaAs/p-GaN het- erojunction is a Shockley diode and the ideality factor n is 1.08. This high quality bonded wafer of n-GaAs/p-GaN has great implications for the optoelectronic integration of GaAs and GaN semiconductor materials.