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Pd在p型单晶硅(100)表面自催化化学沉积(英文)

Autocatalytic Electroless Deposition of Palladium onto p-Silicon (100)
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摘要 研究了Pd在氢终止的p型单晶硅(100)表面的自催化化学沉积(AED).在室温下将刻蚀过的硅片浸入常规的HF-PdCl_2-HCl溶液制备了Pd膜.将沉积了Pd的基底作为工作电极,用循环伏安法(CV)、原子力显微镜(AFM)和X射线光电子能谱(XPS)研究了Pd膜的阳极溶出行为和形貌.结果表明,Pd的生长遵循Volmer-Weber (VW)生长模式,Pd膜给出了很好的支持. The autocatalytic electroless deposition (AED) of palladium onto p-silicon (100) with hydrogen termination was studied. Pd films were prepared by immersing the hydrogen-terminated silicon wafers into conventional HF-PdCl2- HCl solution at room temperature. The anodic stripping behaviors and morphologies of the Pd deposits were studied using cyclic voltammetry (CV), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The results showed that the Pd growth was in Volmer-Weber (VW) mode and the Pd film had good adhesion.
出处 《物理化学学报》 SCIE CAS CSCD 北大核心 2007年第11期1743-1746,共4页 Acta Physico-Chimica Sinica
基金 教育部博士基金(20030730014)资助项目
关键词 自催化化学沉积 阳极溶出 PD 原子力显微镜 p型单晶硅(100) Autocatalytic electroless deposition Anodic stripping Palladium Atomic force microscopy p-Silicon (100)
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参考文献17

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