摘要
研究了Pd在氢终止的p型单晶硅(100)表面的自催化化学沉积(AED).在室温下将刻蚀过的硅片浸入常规的HF-PdCl_2-HCl溶液制备了Pd膜.将沉积了Pd的基底作为工作电极,用循环伏安法(CV)、原子力显微镜(AFM)和X射线光电子能谱(XPS)研究了Pd膜的阳极溶出行为和形貌.结果表明,Pd的生长遵循Volmer-Weber (VW)生长模式,Pd膜给出了很好的支持.
The autocatalytic electroless deposition (AED) of palladium onto p-silicon (100) with hydrogen termination was studied. Pd films were prepared by immersing the hydrogen-terminated silicon wafers into conventional HF-PdCl2- HCl solution at room temperature. The anodic stripping behaviors and morphologies of the Pd deposits were studied using cyclic voltammetry (CV), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The results showed that the Pd growth was in Volmer-Weber (VW) mode and the Pd film had good adhesion.
出处
《物理化学学报》
SCIE
CAS
CSCD
北大核心
2007年第11期1743-1746,共4页
Acta Physico-Chimica Sinica
基金
教育部博士基金(20030730014)资助项目