光谱法控制ITO膜沉积速率

CONTROLLING DEPOSITION RATE OF ITO FILM BY SPECTROMETRY

用磁控反应溅射方法制备ITO膜时，溅射速率不断变化，并且等离子体也发出较强的具有较宽光谱的光.报导了用调整特征光谱强度来控制溅射速率的新方法。

In the ITO films deposition by reactive magnetron sputtering, the deposition rate of ITO film will change with the carrying out of sputtering. We provide a new method to monitor the sputtering viel by detecting the characteristic light intensity of plasma spetra, and the process using this method is presentCd in thc ITO films deposition in the paper.