摘要
采用热丝法沉积金刚石膜.分离送入氢气和甲烷．使作为发热体的钨丝电阻值比经典的热丝法降低20％．用此法制得的金刚石晶形较好．实验表明：反应气体的流量对膜的致密生长区影响很大．
HFCVD metliod was employed to deposit diamond film on silicon substrate. The design of in-letting H2 and CH4 separetely was applied, which made the resistanee of tungsten filament dccrease to 20%,compared to that of HFCVD with mixture inletting. Moreover, well-faccted crystal of diamond could be got. The experiment showed that the nux of reaction gas influnced strongly on dense growth zone of dia-mond film.
出处
《材料研究学报》
EI
CAS
CSCD
北大核心
1997年第3期331-333,共3页
Chinese Journal of Materials Research
基金
国家自然科学基金!59392800
辽宁省科学技术委员会资助
中科院金属腐蚀与防护国家重点实验室资助
