非匹配半导体异质结能带不连续的有效偶矩模型(英文)

A Model for Band Offset in Iattice Mismatch Semiconductor Heterojunctions

提出了非匹配晶格半导体导质结能带不连续的有效偶矩模型。给出了界面宽度的定量表达式，其能带不连续值的预言值与实验值吻合甚好．

An improved effective dipole model for hand offset in lattice mismatchsemiconductor heterojunction is presented.Application of the model to a large number of heterojunctions hives not only the same good result of the widths of interfaceregions as ob-tained in the previous work but also even more accurate predictions of band offset values in quite .good agreement with experiment data.