AlGaAs/GaAs超晶格价带的自旋劈裂

The Spin-splitting of Valence-band with GaAlAs/GaAs Superlattices

对由Al_yGa_(1－y_As，Al_xGa_(1-x)As和GaAs三种材料构成的超晶格价带的自旋劈裂进行了研究．通过改变材料组分和层厚，发现当超晶格单胞对其中心点是不对称结构时，对应的自族向上和自族向下的子带产生劈裂，而且劈裂主要发生在重空穴带和轻空穴带相互作用较强的地方．

The present paper deals with the spin-splitting on the valence-band state of triple-constituent material superlattices: AlyGa1-yAs, AlxGa1-xAs and GaAs. By varying the material compositions or the layer thickness, we observed that the sub-bands corresponding to the spin-up and spindown split when the superlattice unit-cell was asymmetrical about the cell center. Moreover, the splitting mainly occurs in the region where the heavy hole and light hole interact on each other strongly.