摘要
铟锡氧化物(indiumtinoxide,ITO)作为氢化非晶硅薄膜晶体管液晶显示器(hydrogenated amorphous silicon thin film transistor-liquid crystal display,a-Si:HTFT-LCD)最常用的透明导电材料,其图形与厚度会直接影响到器件的相关性能。本文主要阐述了TFT-LCD生产中由于ITO多晶化所造成的残留问题,并根据产线的情况对这些影响进行了分析,对实际生产过程中出现的问题提出了相应的解决方案。
ITO（Indium Tin Oxide） is the most popular conductive material used in a-Si：H TFT-LCDs and its pattern and thickness will affect the characteristic of TFT device directly. This paper mainly described the poly- ITO which could induce ITO residual, and then analyzed the mechanism based on the production process. Solutions to avoid the phenomena have also been put forward
出处
《现代显示》
2007年第11期35-38,共4页
Advanced Display
