基于常规CMOS工艺的电子镇流器芯片设计

The Design of A IC for Elrectrenic Ballasts with Standard CMOS Technology

分析当前主流电子镇流器控制芯片的优缺点,提出了一种适用于功率在20W以下节能灯控制芯片的设计方案。采用常规的CMOS铝栅工艺。整个控制芯片由主芯片和高压管驱动两块芯片组成,两管间通过自举电容耦合。自举电容起的作用：（1）隔离高压（2）传输高压功率管的控制信号。此设计方案的难点是设计出符合上述设计要求的高压管驱动芯片。此款芯片采用6μm CMOS铝栅工艺模型,经仿真验证,现已通过MPW流片成功。测试各项指标都达到设计要求。

Based on the analyze the advantage and shortcoming of current electronic Ballasts .put forward a kind of project applicabled below 20 Walt ,A method is proposed that uses two low-voltage integrated circuits （LVICs） to provide high and lowside gate drive in high-voltage applications, Two coupling capacitor is placed between the two ICs to provide two functions： （1） high-voltage isolation, （2） signaling to the high-side for on/off control. The simulation results are obtained by Cadence Spectre based on 6μm CMOS process.