摘要
我们用PECVD方法制备出SnO_2薄膜,透射电镜TEM分析表明沉积温度由高到低时,SnO_2膜从多晶态转变为非晶态,并且其电阻率随之增加;沉积时氧气流量增加时,SnO_2的电阻率增加。
We have prepared SnO2 thin films at different temperatures by PECVD. Transmission electron microscopy (TEM) shows that the SnO2 thin films undergo the transition from polycrystalline to amorphous phase when the deposition temperature drops. The sheet resistance of the films lessens with rise in deposition temperature and increases with expansion in volume of oxygen flow.
出处
《汕头大学学报(自然科学版)》
1997年第2期80-83,共4页
Journal of Shantou University:Natural Science Edition
基金
国务院侨办重点学科科研基金