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0.82~2.2GHz高线性功率驱动放大器设计

0.82~2.2GHz High Linear Pre-Power Amplifier Design
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摘要 用Jazz0.35μmSiGe BiCMOS工艺设计了一个宽带、高线性和增益可调的功率驱动放大器。放大器采用两级级联结构,第一级采用差分结构,双端输入单端输出,第二级采用单端输入单端输出的共发射极放大结构,在3.3V电源电压下,放大器带宽达到0.82-2.2GHz,高增益模式下放大器小信号增益为29.7±1.3dB,低增益模式下小信号增益为19.7±0.9dB,输出1dB压缩点大于13.7dBm,总的直流电流小于20mA。 A high linearity broadband power amplifier driver with tunable power gain is realized in Jazz 0.35 μ m SiGe BiCMOS techaology. The amplifier adopt two-stage cascade amplifier structure, first stage adopt differential structure with differential inputs and single-ended outputs , the second stage adopt common-emitter structure with single-ended inputs and single-ended outputs. The amplifier works from 0.82GHz to 2.2GHz with a single 3.3V power supply. The amplifier small signal gain from 0.82GHz to 2.2GHz is 29.7±1.3dB in high gain mode and is 19.7 ± 0.9dB in low gain mode. With simple temperature-insensitive bias, the total current is less than 20 mA. The output ldB compression points are greater than 13.7dBm from 0.82GHz to 2.2GHz both in high gain mode and in low gain mode.
出处 《中国集成电路》 2007年第11期34-37,51,共5页 China lntegrated Circuit
关键词 功率驱动放大器 SIGE BICMOS 宽带 1dB压缩点 power amplifier SiGe BiCMOS broad band ldB compression point
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参考文献3

  • 1[2][美]Andrei Grebennikov.射频与微波功率放大器设计[M].北京:电子工业出版社.
  • 2[4]Wei-Chun Hua;Hung-Hui Lai;Po-Tsung Lun;Chee Wee liu;Tzu-Yi Yang;Gin-Kou Ma."High-Linearity and Temperature-Insensitive 2.4GHz SiGe Power Amplifier with Dynamic-Bias control"[C].IEEE Radio Frequency integrated Circuits(RFIC)Symposium,2005.Digest of Papers,12-14 June 2005 Page(s):609 612
  • 3[5]Park,Y.;Lee,C.-H.;Cressler,J.D.;Laskar,J.;Joseph,A."A very low power SiGe LNA for UWB application"IEEE Microwave Symposium Diges,12-17June 2005 Page(s):4pp.

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