掩模曝光剂量的精细控制工艺设计

Mask Fine OPC Process Design Using Circuit Feature Decomposition

本文从光学邻近效应的机理出发,基于区域划分掩模特征线条,实施曝光剂量控制,从而达到光学邻近效应的精细校正。通过模拟测试图形得到改进后的掩模图形畸变率,与传统曝光剂量校正法相比,减少了约4%。

Based on the physical mechanism of optical proximity effect, a new method for fine exposure dose control to optimize optical proximity effect correction is presented. Mask circuit feature decomposition will improve the dose distribution of feature lines so as to obtain better feature pattern. By our simulation using designed test patterns, it showed that the deviation rate of the actual image after taking the new OPC method be 4% less than the existing way.