摘要
针对衍射光学元件(DOE)的离子束刻蚀工艺,结合掩模套刻过程实例,本文提出了刻蚀误差面形分布的概念。在标量衍射的夫琅和费原理上,进行了误差数值模拟分析及讨论。模拟分析和实验数据结果表明,误差的面形分布在DOE器件的衍射焦斑中心会产生一个明显的光强畸变毛刺亮点,严重破坏了靶场照明的均匀性。
According to the technical process of ion beam etching on Diffractive Optical Element （DOE）, a distribution of surface error in ion beam etching was presented. The analysis of numerical simulation based on the theory of Fraunhofer of scalar diffraction was discussed, The results of analysis and experiment show that the surface distribution of etching error causes an aberrant spot of intensity obviously in the center of focal area of DOE, which consumedly reduces the uniformity of target field in uniform illumination.
出处
《光电工程》
EI
CAS
CSCD
北大核心
2007年第11期50-54,60,共6页
Opto-Electronic Engineering
基金
国家863计划项目资助课题
关键词
衍射光学元件
误差面形
掩模套刻
离子束刻蚀
diffractive optical element
surface error
mask etching
ion beam etching
