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Optical Characterization of β-FeSi2 Thin Films Prepared by Femtosecond Laser Ablation 被引量:4

Optical Characterization of β-FeSi2 Thin Films Prepared by Femtosecond Laser Ablation
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摘要 Iron disilicide thin films are prepared on fused quartz using femtosecond laser deposition (FsPLD) with a FeSi2 alloy target. X-ray diffraction results indicate the films are single-phase, orthorhombic, β-FeSi2. Field scanning electron microscopy, high resolution transmission electron microscopy, UV-VIS-NIR spectroscopy and Raman microscope are used to characterize the structure, composition, and optical properties of the β-FeSi2 films. Normal incidence spectral transmittance and reflectance data indicate a minimum, direct energy gap of 0.85 eV. The two most intense lines of Raman scattering peaked at 181.3 cm^-1 and 235.6cm^-1 for the film on fused quartz, and at 191.2cm^-1 and 243.8cm^-1 for the film on Si (100), are observed. Iron disilicide thin films are prepared on fused quartz using femtosecond laser deposition (FsPLD) with a FeSi2 alloy target. X-ray diffraction results indicate the films are single-phase, orthorhombic, β-FeSi2. Field scanning electron microscopy, high resolution transmission electron microscopy, UV-VIS-NIR spectroscopy and Raman microscope are used to characterize the structure, composition, and optical properties of the β-FeSi2 films. Normal incidence spectral transmittance and reflectance data indicate a minimum, direct energy gap of 0.85 eV. The two most intense lines of Raman scattering peaked at 181.3 cm^-1 and 235.6cm^-1 for the film on fused quartz, and at 191.2cm^-1 and 243.8cm^-1 for the film on Si (100), are observed.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2007年第2期563-566,共4页 中国物理快报(英文版)
基金 Supported by the National Natural Science Foundation of China under Grant No 10604018, the Specialized Research Fund for the Doctoral Programme of Higher Education of China under Grant No 20060487006, and the Youth Foundation of Wuhan City under Grant No 20035002016-15.
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