硫掺杂C_(60)薄膜电学性质研究

ELECTRICAL PROPERTIES OF SULFUR DOPED C 60 FILMS

对硫掺杂Ｃ６０薄膜样品在４３３Ｋ进行真空退火，并测量了其电导率随温度的变化关系．发现硫掺杂后Ｃ６０薄膜的电导激活能减小，电导率显著增大．电导率随温度的变化曲线在３６８Ｋ到３８８Ｋ的范围内，存在一个电导率与温度的关系不严格遵循指数规律的过渡区，在过渡区的两侧硫掺杂的Ｃ６０薄膜则表现出明显的半导体特性。

The temperature dependencies of electrical conductivity of sulfur doped C 60 films were measured after annealing at 433K. The results showed that the conductive activation energy decreased and electrical conductivity of C 60 films increased after sulfur doping. From the logarithmic curve of the electrical conductivity versus temperature,a transition zone was seen where the conductivity did not vary with temperature exponentially;however,when above 388K or below 368K,sulfur doped C 60 films showed obvious semiconductive properties. This phenomenon is due to the phase transformation of sulfur molecules in the film.