摘要
用热丝辅助化学汽相沉积技术在Ｓｉ衬底上合成了含少量受主型杂质的近于本征的金刚石薄膜，并研究了三种金属（Ｃｕ，Ａｇ和Ａｌ）与它接触的电学特性，以及退火对接触特性的影响．结果表明Ｃｕ，Ａｇ与金刚石薄膜接触的电学特性比较类似，而Ａｌ则明显不同；
The polycrystalline diamond films were synthesized by thermal filament chemical vapor deposition technique. The electrical characteristics of contacts between metal and diamond film and the effect of annealing have been investigated. Experimental results showed that the electrical characteristics of Cu contact on diamond film is similar to that of Ag,but different from that of Al. In addition,annealing has a great effect on the contact electrical characteristics.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1997年第6期1188-1192,共5页
Acta Physica Sinica
基金
北京市自然科学基金
