低温氮化硅薄膜的介电性能研究

DIELECTRIC PROPERTIES OF SiN x FILMS DEPOSITED AT LOW TEMPERATURE

研究了微波电子回旋共振等离子体化学汽相沉积低温氮化硅薄膜在５—１０６Ｈｚ频率范围内的介电性能．由于低温氮化硅薄膜为具有分形结构的纳米非晶薄膜，致使氮化硅薄膜的介电谱、损耗谱在低频区和高频区具有两种不同的分布规律．在低频区介电谱具有ε′∝ωｎ１－１的关系，ｎ１在０８２—０８８之间，是电子跳跃导电的结果；在高频区介电谱具有ε′∝ωｎ２－１的关系，ｎ２在００５左右。

The dielectric properties of SiN x films,which were deposited at low temperature by microwave electron cyclotron resonance plasma chemical vapor deposition,have been investigated.The frequency dependence of ε′ and ε″ have two kinds of power law dependence in the frequency range of 5—10 6Hz due to the fractal structure in nanometer sized amorphous films.The relationship between ε′ and ω n 1-1 with n 1=0 82—0 88 due to electron hopping are obtained at low frequency region,and the relationship between ε′ and ω n 2-1 with n 2 =0 05 due to the fractal structure conduction are obtained at high frequency region.