退火温度对Nb掺杂SrTiO_3薄膜光电化学性能的影响(英文)

Influence of Annealing Temperature on Photoelectrochemical Performance of Nb-doped SrTiO_3 Film

研究了Nb掺杂SrTiO3薄膜的光电化学性能及其对储氢合金薄膜的光充电性能。采用射频磁控溅射将SrTiO3薄膜沉积在镍片基体上,在300～600℃退火处理后,采用直流磁控溅射将LaNi3.9Al1.3储氢合金薄膜沉积在镍片基体的背面构成SrTiO/Ni/储氢合金电极。随着Nb掺杂SrTiO薄膜热处理温度的升高,阳极光电流和光充电性能先增大后减小。

The photoelectrochemical performances of Nb-doped SrTiO3 films and their photochargeability to hydrogen storage alloy films were investigated. The Nb-doped SrTiO3 films were deposited on nickel substrate by rf magnetron sputtering. After annealed at 300 - 600℃, the LaNi3.9Al1.3 hydrogen storage alloy films were deposited on the back of the Ni substrate by DC magnetron sputtering to form the Nb-doped SrTiO3/Ni/hydrogen storage alloy （SHN） electrodes. With increasing the annealing temperature of the SrTiO3 film, the anodic photocurrent and photochargeability first increased, then decreased.