摘要
采用射频溅射技术沉积Cu/Sn/Zn金属前驱体叠层结合硫化技术在玻璃衬底上成功制备了Cu2ZnSnS4薄膜。X-射线衍射分析表明,通过优化制备条件可以获得单一黝锡矿结构且具有(221)择优取向的Cu2ZnSnS4薄膜。霍尔效应和紫外可见透过谱测量表明,样品的薄膜电阻、吸收系数和光学带隙分别达到0.073Ω.cm,104cm-1和1.53eV,具有适合作为薄膜太阳电池吸收层应用的可能性。
Cu2ZnSnS4 （CZTS） thin films for the absorber of thin film solar cells were successfully prepared by sulfurization of rf magnetron sputtered metal precursors on soda-lime glass substrate. The CZTS thin films having the single stannite-type phase structure with good crystalline quality were obtained as revealed in XRD analysis when the conditions of preparation and sulfurization of the precursors were optimized. Hall effect and UV-VIS measurements showed that sheet resistivity, absorption coefficient and optical band -gap energy for the films ＇prepared under the optimized processing conditions are about 0. 073 Ω ·cm, 104 cm^-1 and 1.53 eV, respectively, indicating that the CZTS films prepared by sulfurization of sputtered metal precursor are suitable for the thin film solar-cell absorber.
出处
《中山大学学报（自然科学版）》
CAS
CSCD
北大核心
2007年第B06期32-34,共3页
Acta Scientiarum Naturalium Universitatis Sunyatseni
基金
国家自然科学基金资助项目(10574106)
