期刊文献+

中频磁控溅射法制备氧化锌钇薄膜及其性能研究(英文) 被引量:1

Study on the Preparation of ZYO Thin Films by Middle Frequency Alternative Magnetron Sputtering and Their Properties
下载PDF
导出
摘要 利用中频磁控溅射法,溅射氧化锌钇(ZYO)陶瓷靶材,在玻璃基底上制备ZYO透明导电薄膜。研究了氧化钇掺杂量和基底温度对薄膜的结构、电学性能和光学性能的影响。结果表明,ZYO薄膜为钎锌矿型结构,呈c轴择优取向,平均可见光透过率(400~800nm)达到80%以上。制备的ZYO薄膜具有的最低电阻率为1.18×10-3Ωcm。 Y-doped zinc oxide (ZYO) thin films were prepared by middle frequency alternative magnetron sputtering on glass substrates with ZYO ceramic targets. The influences of Y2O3 content and substrate temperature on microstructures, optical and electrical properties of the thin films have been investigated. The results show that the ZYO films are of the structure of wurtzite type with high c - axis orientation. The lowest resistivity of the films in this work is 1.18 × 10^-3Ωcm with the transmittance of over 80% at the visible region.
出处 《中山大学学报(自然科学版)》 CAS CSCD 北大核心 2007年第B06期39-40,共2页 Acta Scientiarum Naturalium Universitatis Sunyatseni
关键词 ZYO 磁控溅射 透明导电薄膜 透过率 电阻率 ZYO magnetron sputtering transparent conductive film transmittance resistivity
  • 相关文献

参考文献1

二级参考文献6

  • 1Suzuki A,Matsushita T,et al.Large transmittance changes induced in Ga-doped ZnO thin films prepared by pulsed laser deposition[].Japanese Journal of Applied Physics.1996
  • 2Tabuchy K,et al.Optimization of ZnO films for amorphous silicon solar cells[].Japanese Journal of Applied Physics.1993
  • 3Park K C,et al.The physical properties of Al-doped zinc oxide films prepared by RF magnetron sputtering[].Thin Solid films.1997
  • 4Ghosh S,Sarkar A,Chaudhuri S,et al.Grain boundary scattering in aluminum-doped ZnO films[].Thin Solid films.1991
  • 5Chopra K L,Major S,Pandya D K.Transparent conductors-A status review[].Thin Solid films.1983
  • 6Nunes P,Malik A,et al.Influence of the doping and annealing atomic-sphere on zinc oxide thin films deposited by spray pyrolysis[].Vacuum.1999

共引文献4

同被引文献3

引证文献1

二级引证文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部