摘要
采用倒筒式射频溅射方法,在Pt/Ti/SiO2/Si基片上制备了Ba0.65Sr0.35TiO3(简称BST)薄膜。研究了自偏压对BST薄膜结构及电学性能的影响。在较高自偏压下制备的BST薄膜具有高度的(100)择优取向,且结晶性好,表面平整,耐压能力强。在25℃时薄膜的热释电系数高达6.73×10-7C/(cm2.K)。红外单元探测器在30Hz下的探测率D*为4.93×107cm.Hz1/2/W。研究结果表明,利用倒筒式射频溅射方法,适当提高自偏压,可以制备出热释电性能优良的BST薄膜。
Ba0. 65 Sr0. 35TiO3 （BST） thin films were deposited on Pt/Ti/SiO2/Si substrates by inverted cylindrical RF sputtering. The influence of target self-bias voltage on the microstructure and electrical properties of sputtered BST films was investigated. Deposited at high target self-bias voltage, the BST thin films are highly （100）-orientation, and have smooth surface, excellent crystallinity and good withstand voltage properties. The pyroelectric coefficients of BST thin films are 6.73×10^-7C/（cm^2·K） at 25℃ and at 12V/μm. A detectivity D＊ of 4.93×10^7cm. Hz^1/2/W is obtained at room temperature and at 30Hz by the infrared detectors. Our results reveal that high pyroelectric property of BST thin film could be achievable using inverted cylindrical RF sputtering with high target self-bias voltage.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2007年第3期348-350,353,共4页
Journal of Functional Materials
基金
国家重点基础研究发展计划(973计划)资助项目(513102)
关键词
BST
倒筒式
射频溅射
热释电系数
探测率
BST
inverted cylindrical
RF sputtering
pyroelectric coefficients
detectivity
