期刊文献+

富钛梯度(Ba_(0.6)Sr_(0.4))TiO_3薄膜的介电调谐性能研究 被引量:2

The dielectric tunable properties of(Ba_(0.6)Sr_(0.4))TiO_3 grade thin films with rich titanium
下载PDF
导出
摘要 采用溶胶凝胶工艺,在Pt/Ti/SiO2/Si衬底制备了富钛(Ba0.6Sr0.4)TiO3(BST)薄膜和富钛梯度薄膜。利用X射线衍射(XRD)和扫描电镜(SEM)分析测定了BST的微结构和薄膜的表面形貌,研究了富钛含量和梯度结构对BST介电调谐性能的影响。结果表明富钛薄膜中析出了TiO2相,薄膜的介电常数、损耗和调谐量随着钙钛矿结构(ABO3)中A/B的增加而增加;当A/B为0.68时,有最小的介电损耗0.017;当A/B为1时,有最高的介电常数和调谐量,分别为592%和43.72%。而富钛梯度薄膜因TiO2的析出而丧失晶格不匹配应力的影响,在介电调谐性能上并没有表现出梯度薄膜的综合优异性能。 The BST thin films and grade BST thin film with rich titanium were fabricated by sol-gel method on Pt/Ti/SiO2/Si substrate. X-ray diffraction and scanning electron microscopy were used to determine the microstructure and the morphology of the BST films. The influence of the rich titanium content and the grade structure on dielectric tunable properties of BST thin films was investigated. It found that the BST thin films with rich titanium precipitate TiO2 and their dielectric constant,dielectric loss and tunability all increase with the increasing the ratio of A and B of perovskite structure (ABO3). BST thin films showed the smallest dielectric loss of 0. 017 when the ration of A and B was 0.68 and BST thin films exhibited the highest dielectric constant of 592 and the largest tunability of 43.72% when the ration of A and B was 1. The graded BST thin film with rich titanium lost the crystal lattice mismatch stress because of the precipitation of TiOz. It didn't show wonderful dielectric tunable properties of graded thin films.
出处 《功能材料》 EI CAS CSCD 北大核心 2007年第3期373-376,共4页 Journal of Functional Materials
基金 国家自然科学基金资助项目(50125309)
关键词 BST 溶胶凝胶 梯度薄膜 介电调谐性能 BST sol-gel grade thin films dielectric tunable properties
  • 相关文献

参考文献15

  • 1Carlson C M,Rivkin T V,Parilla P A,et al.[J].Appl Phys Lett,2000,76:1920.
  • 2Zafar S,Jones R E,Chu P,et al.[J].Appl Phys Lett,1998,72:2820.
  • 3Chen C L,Shen J,Chen S Y,et al.[J].Appl Phys Lett,2001,78:652.
  • 4Im J,Auciello O,Baumann P K,et al.[J].Appl Phys Lett,2000,76:625.
  • 5Streiffer S K,Basceri C,Parker C B,et al.[J].J Appl Phys,1999,86:4565.
  • 6Pervez N K,Hansen P J,York R A.[J].Appl Phys Lett,2004,85:4451.
  • 7Lu S G,Zhu X H,Mak C L,et al.[J].Appl Phys Lett,2003,82:2877.
  • 8Zhu X H,Chong N,Wah H,et al.[J].Appl Phys Lett,2002,80:3376.
  • 9Saha S,Krupanidhi S B.[J].Appl Phys Lett,2001,79:111.
  • 10Jain M,Majumder S B,Katiyar R S,et al.[J].Appl Phys Lett,2003,82:1911.

同被引文献17

  • 1蒋丽珍,何雪竹,余虹,邬良能.La_(1-x)Sr_xCoO_3体系的绝缘体-金属相变[J].中国计量学院学报,2006,17(3):224-227. 被引量:5
  • 2王中财,程素君,朱利娜,郭金锁,吴琼.Cu掺杂对Fe/Mo双钙钛矿居里温度的影响[J].中国计量学院学报,2006,17(4):330-332. 被引量:3
  • 3Eerenstein W, Mathur N D, Scott J. Multiferroic and magnetoelectric materials[J]. Nature, 2006,442 : 759.
  • 4Fiebig M. Revival of the rnagnetoelectric effect[J]. J Phys D: Appl Phys,2005,38(8):R123.
  • 5Patil D R, Lokare S A, Devan R S, et al. Dielectric properties and magnetoelectric effect of xNiFe2O4 + ( 1-x) Ba0. 8 Sr0. 2 TiO3 composites[J]. J Phys Chem Solids, 2007,68 (8) : 1522.
  • 6Peng Dongwen(彭东文).Studies on barium strontium titanate nonlinear dielectric thin films with high dielectric tunability and low dissipation factor(钛酸锶钡非线性介质薄膜的高介电调谐率和低介电损耗的研究)[D].Shanghai(上海):Shanghai University(上海大学),2005:11.
  • 7Nan Cewen, Bichurin M I, Dong Shuxiang, et al. Multiferroic magnetoelectric composites: Historical perspective, status, and future directions[J]. J Appl Phys,2008, 103(3). 031101.
  • 8Zhou Jianping, Zhao Wei, Guo Yangyang, et al. Magnetoelectric coupling in small Pb (Zr, Ti) O3/terfenol-D laminatecomposites[J]. J Appl Phys, 2009,105 (6) : 063913.
  • 9Kamble Y B, Chougule S S, Chougule B K. Characterization and property measurements of yCo0. 9 Cd0.1 Fe2 O4 + ( 1 -y) PZT ME eomposites[J]. J Alloys Compd, 2009,476 (1-2) : 733.
  • 10Tang X G, Chew K H, Wang J, et al. Dielectric tunability of (Ba0.90 Ca0. 10 ) (Ti0.75 Zr0.25 ) O3 ceramics[J]; Appl Phys Lett,2004,85(6) : 991.

引证文献2

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部