RuO_2厚膜电阻器的传导模型

Conductive Models in RuO 2-Based Thick Film Resistors

ＲｕＯ２基厚膜电阻器的电阻温度系数ＴＣＲ取决于ＲｕＯ２的含量，存在ＲｕＯ２含量的临界点（Ｗｃ），该临界点的ＴＣＲ近似为零。当ＲｕＯ２含量低于Ｗｃ时，电阻有负温度系数，系数值随ＲｕＯ２含量的减少单调增大。当ＲｕＯ２含量高于Ｗｃ时，电阻有正温度系数，其系数值随ＲｕＯ２含量的增加单调增大。用Ｐｉｋｅ和Ｓｅａｇｅｒ提出的隧道效应模型计算电阻器的热电阻温度系数（ＨＴＣＲ）和冷电阻温度系数（ＣＴＣＲ），计算结果与临界点Ｗｃ的实验数据相符合。对低于或高于Ｗｃ的情况，应考虑ＲｕＯ２含量的影响因素。由修正后的隧道效应模型计算的ＨＴＣＲ和ＣＴＣＲ更接近实验数据。作者认为：ＲｕＯ２含量高的电阻器主要是金属型传导模型，而ＲｕＯ２含量低的电阻器以隧道效应模型为主。

The temperature dependence of resistance of RuO 2-based thick film resistors were investigated. The temperature coefficient of resistance( TCR) of resistors depends on RuO 2 content. There is a critical point of RuO 2 content, Wc, at this point the TCR measured is approximately equal to zero. As the RuO 2 content is less than Wc, the resistors get negative TCR which is increased with the decrease of RuO 2 content. As the RuO 2 content is more than Wc, the positive TCR is gotten which is increased with the increase of RuO 2 content. The tunneling model was used to calculate the hot and cold temperature coefficients of resistance (HTCR and CTCR). The calculated results are corresponding to the experimental data at Wc. For those beyond Wc, a modified tunneling model was proposed. By using this modified model we conclude that a resistor having a high RuO 2 content has a metal-like conduction, however, the resistor having a low RuO 2 content has a tunneling conduction.