脉冲激光弯曲成形技术中硅片表面的形貌分析

Analysis of Silicon Surface Profile of Pulsed Laser Bending Processing

对长脉宽脉冲激光弯曲后的硅片试件进行了表面形貌以及晶相等特性分析.结果表明,激光作用于硅片表面后形成了三种特殊区域,分别为边缘区域、过渡区域、主作用区域.其中过渡区域和主作用区域变化比较明显,分别出现了堆积层错现象和波纹状形貌.对主作用区域进行拉曼光谱检测,分析谱图没有发现典型的非晶硅转变,只是存在微弱的Si-Ⅰ→Si-Ⅲ转化.利用X射线定向仪检测原始和激光作用后表面的晶向,发现激光作用区域晶向变化较明显,存在晶体畸变和晶粒细化现象.

Surface properties such as profile and crystal phase of bent silicon samples by long laser pulses were analyzed. The results indicated that the irradiated surface was divided into ambient region, transition region and main function region. The surfaces of the transition region and main function region were changed seriously, and massing stacking fault and ripple profile were found respectively. The typical transformation of amorphous silicon was not found at Raman spectrum of the main function region, and only existed tiny Si-Ⅰ→Si-Ⅲ conversion. Meanwhile the crystal-plane orientation was changed seriously compared to the initial crystal-plane by X-ray crystalplane identification, and crystal distortion and thinning appeared in the region irradiated.