氧离子束辅助激光淀积生长ZnO/Si薄膜深度剖析

Thin film depth profiling analysis on ZnO/Si grown by O^+-assisted PLD

对于在Si(111)上用氧离子束辅助(O+-assisted)脉冲激光淀积(PLD)生长的ZnO薄膜,用X射线光电子能谱(XPS)深度剖析方法对长成的样品进行了异位测试,分析了导致各峰峰位能移的因素;通过异位与原位XPS谱图的比较,指出O+-assistedPLD法生成的ZnO薄膜中存在孔隙;指出生长出的ZnO薄膜中含Si成分的厚度不超过18nm;同时探讨了在长成的ZnO/Si上继续生长GaN薄膜的可行性.

The ZnO thin films being grown on Si（ 111 ） by O^＋ -assisted pulsed laser deposition（PLD） method were carried out with the ex situ test by using X-ray photoelectron spectroscopy（XPS） depth profile measure- ments. The reasons of each energy peak position movement were analyzed. Comparing the ex-situ test pictures with the in-situ test pictures, it is found that there are porosities in the thin films. And the thickness with Si composition in ZnO/Si thin film should be not more than 18nm. It may be practicable to continuely grow GaN thin film on ZnO/Si （111 ） grown by O^＋ -assisted PLD.