Mo/α-Al_2O_3界面的二次离子质谱研究

SIMS Analysis of the Mo/α-Al_2O_3 Interface

采用电子束蒸发方法，在200℃的抛光（1102）取向的蓝宝石（α－Al2O3）单晶衬底上淀积厚度为300nm的Mo膜。经870℃下不同真空退火时间处理后，运用MCs＋－SIMS技术进行了深度剖析，并结合XRD物相分析，对Mo／A2O3界面问题进行了探讨。结果表明，在Mo／Al2O3界面处存在原子相互扩散形成的过渡层。退火处理后，过渡层展宽，有MoO2生成。延长退火时间，过渡层变化不大。

A 300 nm Mo film was deposited on a polished(1102) oriented sapphire substrate at 200℃by electron beam evaporation. Depth profiling was conducted using MCs+-SIMS technique after the samples were annealed at 870℃ for different time in high vacuum. Along with XRD analysis,the Mo/Al2O3 interfacial reaction was investigated. It was found that there was a transition layer formed due to the interdiffusion of atoms in the interface region. After annealing, the transition layer broadened, and a layer of MoO2 grew in the interface region,which hindered the inter-diffusion,so the transition layer changed a little with increasing the annealing time.