期刊文献+

空气氧化法对纳米碳管场发射性能的影响(英文) 被引量:2

Effects of Air Oxidation on Field Emission Properties of Carbon Nanotubes
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摘要 以镍金属为催化剂,在600℃条件下,采用化学气相沉积法(CVD)制备碳纳米管。将制得的碳纳米管用高能球磨法处理0.5~1h后,以空气氧化法进行提纯,并研究了氧化温度对碳纳米管形貌和场发射性能的影响。用扫描电镜、Raman光谱分别对300~500℃的氧化提纯后的碳纳米管的形貌和结构进行了表征。结果表明:碳纳米管的场发射性能随温度的升高而升高,经400~450℃加热10min后,非晶碳成分减少,碳管纯度得到提高,场发射性能达到最高;当氧化温度继续升高时,碳纳米管的缺陷密度增大,非晶化程度增加,场发射特性变差。因此,通过控制氧化温度可以有效提高碳纳米管的纯度和场发射性能。 Multiwall carbon nanotubes (CNTs) were prepared by the catalytic decomposition of acetylene at 600 ℃ using Ni as catalysts, and then were treated by ball-milling for 0.5-1 h. The treated CNTs were purified by removing most of amorphous carbon using air oxidation method at 300-500 ℃. The morphologies and field emission properties of the oxidized CNTs were changed, mainly depending on the oxidation temperature. The field emission current density was increased to a maximum, and then decreased with increasing the oxidation temperature. When the CNTs were oxidized at 400 ℃ for 10 min, the field emission current density reached to 126.5 μA/cm^2 at the applied field of 4.41 V/him. As a result, the most of amorphous carbon was removed and the purity of the CNTs was improved greatly. When the oxidized temperature is 400-450 ℃, the purified CNTs showed excellent field emission properties, such as high emission current density and uniform luminescence spots distribution.
出处 《液晶与显示》 CAS CSCD 北大核心 2007年第5期541-547,共7页 Chinese Journal of Liquid Crystals and Displays
基金 Supported by Shanghai Science Technology Committee ( No .0552nm006 , No .0652nm033 , No .05PJ14320 , No .06DZ11404 , No . 50672026 ,No . 05DZ05803) Development Program of High Technology and Innovation of Shanghai Economic Committee Project of Key Laboratory of Advanced Display and System Applications (Shang-hai University),Ministry of Education(No .P200503)
关键词 碳纳米管 场发射 球磨 空气氧化 carbon nanotube field emission ball milling air oxidation
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同被引文献15

  • 1Daniel den Engelsen.真空显示器件的魅力还在吗?[J].现代显示,2004(4):29-32. 被引量:8
  • 2曾凡光,朱长纯,刘卫华,刘兴辉.碳纳米管场发射显示器及其全印刷制造技术[J].西安交通大学学报,2005,39(10):1139-1141. 被引量:5
  • 3李玉魁,郭艳清,朱长纯.三极结构场致发射显示器件的制作[J].液晶与显示,2006,21(3):232-235. 被引量:15
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