摘要
根据Sol-Gel工艺制备的ZrO2－SnO2薄膜的气敏性能数据，提出了常温下SnO2（ZrO2）薄膜对H2S的气敏机理模型.根据此模型所得定量分析结果与实验结果一致.
According to the experimental results of gas sensing properties of SnO2(ZrO2) thin films prepared by the Sol-Gel technique. a sensing mechanism model for SnO2(Zro2) thin films to H2S at room temperature was proposed. With this model, the quantitative results obtained coincide with the experimental results.
出处
《材料研究学报》
EI
CAS
CSCD
北大核心
1997年第4期357-362,共6页
Chinese Journal of Materials Research
关键词
薄膜
常温气敏机理
气敏
二氧化锡
二氧化锆
ZrO2-SnO2 thin film Sol-gel technique gas sensing mechanism model at room temperature response and recovery behaviour
